Title :
Ionized metal plasma deposition of titanium and titanium nitride for deep contact applications
Author :
Yoo, Bong Young ; Park, Young-Ho ; Lee, Hyeon-Deok ; Kim, Jae Hak ; Kang, Ho-Kyu ; Lee, Moon Yong ; Wang, Hou Gong ; Lee, Kyoung-Sik ; Van Gogh, Jim ; Chu, Chong-Hwan ; Lai, Steve ; McClintock, Bill ; Edelstein, Sergio ; Chen, Fusen
Author_Institution :
Samsung Electron. Co. Ltd., Santa Clara, CA, USA
Abstract :
The characteristics of ionized metal plasma PVD Ti-TiN films have been investigated for the application as a liner for small deep contacts. Compared to collimated Ti-TiN films, the bottom coverage of IMP Ti-TiN is more than two times higher at high aspect ratio contacts. With substrate bias, IMP Ti and IMP TiN show different crystallographic orientation behaviour. When applied to deep contacts, excellent contact resistance was achieved with thinner IMP Ti films, which is only one third of the thickness of collimated Ti films. Adopting the IMP TiN liner also represents a lower contact resistance than collimated TiN liners
Keywords :
chemical interdiffusion; contact resistance; crystal orientation; diffusion barriers; integrated circuit interconnections; integrated circuit metallisation; plasma deposition; titanium; titanium compounds; IMP Ti crystallographic orientation; IMP Ti film thickness; IMP Ti films; IMP Ti-TiN; IMP TiN crystallographic orientation; IMP TiN liner contact resistance; Ti-TiN; Ti-TiN film bottom coverage; collimated Ti-TiN films; contact aspect ratio; contact resistance; deep contact applications; deep contact liner; deep contacts; ionized metal plasma PVD Ti-TiN films; ionized metal plasma deposition; substrate bias; titanium; titanium nitride; Atherosclerosis; Atomic layer deposition; Collimators; Contact resistance; Crystallography; Plasma applications; Plasma properties; Substrates; Tin; Titanium;
Conference_Titel :
Interconnect Technology Conference, 1998. Proceedings of the IEEE 1998 International
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-4285-2
DOI :
10.1109/IITC.1998.704917
