Ionized metal plasma deposition of titanium and titanium nitride for deep contact applications

Author

Yoo, Bong Young ; Park, Young-Ho ; Lee, Hyeon-Deok ; Kim, Jae Hak ; Kang, Ho-Kyu ; Lee, Moon Yong ; Wang, Hou Gong ; Lee, Kyoung-Sik ; Van Gogh, Jim ; Chu, Chong-Hwan ; Lai, Steve ; McClintock, Bill ; Edelstein, Sergio ; Chen, Fusen

Author_Institution

Samsung Electron. Co. Ltd., Santa Clara, CA, USA

fYear

1998

fDate

1-3 Jun 1998

Firstpage

262

Lastpage

264

Abstract

The characteristics of ionized metal plasma PVD Ti-TiN films have been investigated for the application as a liner for small deep contacts. Compared to collimated Ti-TiN films, the bottom coverage of IMP Ti-TiN is more than two times higher at high aspect ratio contacts. With substrate bias, IMP Ti and IMP TiN show different crystallographic orientation behaviour. When applied to deep contacts, excellent contact resistance was achieved with thinner IMP Ti films, which is only one third of the thickness of collimated Ti films. Adopting the IMP TiN liner also represents a lower contact resistance than collimated TiN liners

Keywords

chemical interdiffusion; contact resistance; crystal orientation; diffusion barriers; integrated circuit interconnections; integrated circuit metallisation; plasma deposition; titanium; titanium compounds; IMP Ti crystallographic orientation; IMP Ti film thickness; IMP Ti films; IMP Ti-TiN; IMP TiN crystallographic orientation; IMP TiN liner contact resistance; Ti-TiN; Ti-TiN film bottom coverage; collimated Ti-TiN films; contact aspect ratio; contact resistance; deep contact applications; deep contact liner; deep contacts; ionized metal plasma PVD Ti-TiN films; ionized metal plasma deposition; substrate bias; titanium; titanium nitride; Atherosclerosis; Atomic layer deposition; Collimators; Contact resistance; Crystallography; Plasma applications; Plasma properties; Substrates; Tin; Titanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference, 1998. Proceedings of the IEEE 1998 International

Conference_Location

San Francisco, CA

Print_ISBN

0-7803-4285-2

Type

conf

DOI

10.1109/IITC.1998.704917

Filename

704917