Title :
Titanium-related emission signals for endpoint detection during via etch process
Author :
Low, C.H. ; Chin, W.S. ; Zhou, M.S. ; Loong, S.T. ; Chan, L.
Author_Institution :
Dept. of Chem., Nat. Univ. of Singapore, Singapore
Abstract :
In this paper, we report the use of titanium-related emission signals, typically Ti 399.9 nm, as an alternative for endpoint detection in the via etch process. These signals give a characteristic peak-like structure in the intensity vs. time (I-T) plot. The cross-sectional profiles of samples etch-stopped at different points on the I-T plot have been verified using secondary electron microscopy (SEM). The proposed endpoint method also gives promising results for samples with device topography and smaller percentage exposed area
Keywords :
antireflection coatings; etching; integrated circuit interconnections; integrated circuit metallisation; integrated circuit yield; luminescence; scanning electron microscopy; titanium; 399.9 nm; SEM; Ti; TiN ARC; TiN-AlCu-TiN-SiO2-Si; characteristic peak-like structure; cross-sectional profile; device topography; endpoint detection; endpoint method; etch-stopped samples; intensity-time plot; secondary electron microscopy; titanium-related emission signals; via etch process; Electron microscopy; Electron optics; Etching; Manufacturing processes; Optical films; Plasma applications; Signal detection; Signal processing; Stimulated emission; Tin;
Conference_Titel :
Interconnect Technology Conference, 1998. Proceedings of the IEEE 1998 International
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-4285-2
DOI :
10.1109/IITC.1998.704918
