Distributed MEMS phase shifters on silicon using tapered impedance unit cells

Author

Lakshminarayanan, B. ; Weller, T.

Author_Institution

Dept. of Electr. Eng., Univ. of South Florida, Tampa, FL, USA

Volume

2

fYear

2002

fDate

2-7 June 2002

Firstpage

1237

Abstract

This paper presents results for one bit distributed coplanar waveguide (CPW) MEMS phase shifters that are designed to operate from 5-40 GHz on high resistivity silicon. The periodically loaded structures use 11 MEMS capacitors interconnected with tapered impedance transmission line. The phase shift of a one bit configuration is approximately 150/spl deg//dB at 25 GHz and 211/spl deg//dB at 35 GHz. The return loss in the up and down state is greater than 10 dB from 10-35 GHz.

Keywords

coplanar waveguide components; distributed parameter networks; micromechanical devices; microwave phase shifters; millimetre wave phase shifters; silicon; 10 dB; 5 to 40 GHz; CPW MEMS phase shifters; MEMS capacitors; Si; coplanar waveguide; distributed MEMS phase shifters; high resistivity Si substrate; periodically loaded structures; phase-shifter fabrication; tapered impedance transmission line; Capacitance; Capacitors; Conductivity; Coplanar waveguides; Impedance; Insertion loss; Micromechanical devices; Phase shifters; Silicon; Transmission lines;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2002 IEEE MTT-S International

Conference_Location

Seattle, WA, USA

ISSN

0149-645X

Print_ISBN

0-7803-7239-5

Type

conf

DOI

10.1109/MWSYM.2002.1011883

Filename

1011883