Etch/metallization process sequence integration-impact of Al texture on Al etch performance

Author

Yan, Chun ; Stokes, Jeffrey ; Arias, Sue ; Ye, Yan ; Ma, Diana ; Chen, Liang ; Subrahmanyan, Suchitra ; Zhang, Hong ; McArthur, Sue ; Khurana, Nitin ; Mosely, Rod

Author_Institution

Appl. Mater. Inc., Santa Clara, CA, USA

fYear

1998

fDate

1-3 Jun 1998

Firstpage

268

Lastpage

270

Abstract

Very successful process sequence integration has been demonstrated with Al etch/CVD/PVD-Al deposition. For CVD-Al with poor Al(111) texture, Al sidewall attack occurs at the CVD-Al/TiN-barrier interface. However, with a thin Ti layer on top of the CVD-TiN film, excellent CVD-Al(111) texture is produced without Al sidewall attack. Furthermore, Cu residue performance of CVD/PVD-Al-1.0%Cu is observed to be quite similar to that on PVD-Al-0.5%Cu. The impact of oxide substrate material on Al etch performance is also addressed

Keywords

aluminium; aluminium alloys; chemical interdiffusion; chemical vapour deposition; copper alloys; diffusion barriers; etching; integrated circuit interconnections; integrated circuit metallisation; interface structure; sputter deposition; surface contamination; surface texture; Al etch performance; Al etch/CVD-Al deposition; Al etch/PVD-Al deposition; Al sidewall attack; Al texture; Al(111) texture; Al-SiO₂-Si; Al-Ti-TiN; Al-TiN; AlCu; CVD-Al; CVD-Al(111) texture; CVD-Al/TiN-barrier interface; CVD-AlCu; CVD-TiN film; Cu residue performance; PVD-AlCu; SiO₂-Si; etch/metallization process sequence integration; oxide substrate material; process sequence integration; thin Ti layer; Artificial intelligence; Etching; Grain size; Metallization; Rough surfaces; Substrates; Surface roughness; Surface topography; Testing; Tin;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference, 1998. Proceedings of the IEEE 1998 International

Conference_Location

San Francisco, CA

Print_ISBN

0-7803-4285-2

Type

conf

DOI

10.1109/IITC.1998.704919

Filename

704919