Title :
Etch/metallization process sequence integration-impact of Al texture on Al etch performance
Author :
Yan, Chun ; Stokes, Jeffrey ; Arias, Sue ; Ye, Yan ; Ma, Diana ; Chen, Liang ; Subrahmanyan, Suchitra ; Zhang, Hong ; McArthur, Sue ; Khurana, Nitin ; Mosely, Rod
Author_Institution :
Appl. Mater. Inc., Santa Clara, CA, USA
Abstract :
Very successful process sequence integration has been demonstrated with Al etch/CVD/PVD-Al deposition. For CVD-Al with poor Al(111) texture, Al sidewall attack occurs at the CVD-Al/TiN-barrier interface. However, with a thin Ti layer on top of the CVD-TiN film, excellent CVD-Al(111) texture is produced without Al sidewall attack. Furthermore, Cu residue performance of CVD/PVD-Al-1.0%Cu is observed to be quite similar to that on PVD-Al-0.5%Cu. The impact of oxide substrate material on Al etch performance is also addressed
Keywords :
aluminium; aluminium alloys; chemical interdiffusion; chemical vapour deposition; copper alloys; diffusion barriers; etching; integrated circuit interconnections; integrated circuit metallisation; interface structure; sputter deposition; surface contamination; surface texture; Al etch performance; Al etch/CVD-Al deposition; Al etch/PVD-Al deposition; Al sidewall attack; Al texture; Al(111) texture; Al-SiO2-Si; Al-Ti-TiN; Al-TiN; AlCu; CVD-Al; CVD-Al(111) texture; CVD-Al/TiN-barrier interface; CVD-AlCu; CVD-TiN film; Cu residue performance; PVD-AlCu; SiO2-Si; etch/metallization process sequence integration; oxide substrate material; process sequence integration; thin Ti layer; Artificial intelligence; Etching; Grain size; Metallization; Rough surfaces; Substrates; Surface roughness; Surface topography; Testing; Tin;
Conference_Titel :
Interconnect Technology Conference, 1998. Proceedings of the IEEE 1998 International
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-4285-2
DOI :
10.1109/IITC.1998.704919
