Title :
A set of integrated circuits for 60 GHz radio front-end
Author :
Karkkainen, M. ; Varonen, M. ; Riska, J. ; Kangaslahti, P. ; Porra, V.
Author_Institution :
Electron. Circuit Design Lab., Helsinki Univ. of Technol., Espoo, Finland
Abstract :
This paper describes results obtained within the MMIC research activity at the Helsinki University of Technology (HUT). These MMICs were developed for a 60 GHz broadband radio front-end. A set of circuits is reported including power, low noise amplifiers, mixers and signal generation circuits. They have been fabricated with a commercially available 0.15 /spl mu/m GaAs pseudomorphic HEMT technology. Finally, the performance of the circuits was measured at 60 GHz frequency: The power amplifier has 14 dBm output compression point and 15.5 dB small signal gain. The low noise amplifier exhibits 24 dB of gain with 3.5 dB noise figure and the up-conversion mixer circuit has 12.7 dB of conversion loss.
Keywords :
HEMT integrated circuits; III-V semiconductors; MIMIC; MMIC amplifiers; MMIC mixers; MMIC power amplifiers; gallium arsenide; millimetre wave amplifiers; millimetre wave mixers; millimetre wave power amplifiers; radio equipment; 0.15 micron; 12.7 dB; 15.5 dB; 24 dB; 3.5 dB; 60 GHz; GaAs; GaAs pseudomorphic HEMT technology; MMIC; broadband radio front-end; conversion loss; integrated circuit; low noise amplifier; noise figure; output compression point; power amplifier; signal generation circuit; small-signal gain; up-conversion mixer; Broadband amplifiers; Gain; Integrated circuit noise; Integrated circuit technology; Low-noise amplifiers; MMICs; Noise figure; Noise generators; Power generation; Radiofrequency amplifiers;
Conference_Titel :
Microwave Symposium Digest, 2002 IEEE MTT-S International
Conference_Location :
Seattle, WA, USA
Print_ISBN :
0-7803-7239-5
DOI :
10.1109/MWSYM.2002.1011895
