Integration aspects of Flowfill and spin-on-glass process for sub-0.35 μm interconnects

Author

Penka, Sabine ; Robl, Werner ; Strenz, Robert ; Baumgartner, Philip

Author_Institution

Siemens AG, Munich, Germany

fYear

1998

fDate

1-3 Jun 1998

Firstpage

271

Lastpage

273

Abstract

Flowfill is a silane based process that offers local planarization similar to SOG. For sub-0.35 μm devices, both processes are required for global planarization for critical metal layers. Integration aspects are studied for Flowfill and SOG, both in combination with CMP. The polishing process does not change the chemical stability or dielectric constant of these processes. There is an influence on the CMP nonuniformity and via resistance when Flowfill is annealed in forming gas. In case of SOG, the O₂ stripping process modifies the SOG layer, which leads to a higher dielectric constant. Flowfill has a positive influence on electromigration stress in Al lines, but leads to reduced device lifetimes in comparison to the SOG/CMP process

Keywords

aluminium; annealing; chemical mechanical polishing; dielectric thin films; electromigration; glass; integrated circuit interconnections; integrated circuit metallisation; integrated circuit testing; permittivity; spin coating; 0.35 micron; Al; Al lines; CMP; CMP nonuniformity; Flowfill forming gas anneal; Flowfill process integration; Flowfill silane based process; O₂; O₂ stripping process; SOG layer; SOG/CMP process; SiH₄; chemical stability; critical metal layers; device lifetimes; dielectric constant; electromigration stress; global planarization; interconnects; local planarization; polishing process; spin-on-glass process integration; via resistance; Annealing; Atmosphere; Brushes; Chemical processes; Dielectric constant; Electromigration; High-K gate dielectrics; Integrated circuit interconnections; Planarization; Stability;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference, 1998. Proceedings of the IEEE 1998 International

Conference_Location

San Francisco, CA

Print_ISBN

0-7803-4285-2

Type

conf

DOI

10.1109/IITC.1998.704920

Filename

704920