Title :
An active frequency doubler with DC-100GHz range
Author :
Vera, L. ; Long, J.R. ; Gross, B.J.
Author_Institution :
Electron. Res. Lab./DIMES, Delft Univ. of Technol., Delft, Netherlands
fDate :
Sept. 28 2014-Oct. 1 2014
Abstract :
A broadband, active doubler based on asymmetrically biased differential pairs delivers conversion gain (CG) from DC to 100 GHz. Measured CG is >10 dB up to 50 GHz, >6 dB up to 80 GHz, and >0 dB up to 100 GHz. Second-harmonic (4× the input) suppression is -28 dBc at 50 GHz. Implemented in a 90 nm SiGe technology, the 0.371 mm2 multiplier core consumes 25 mA from a 4.5 V supply.
Keywords :
Ge-Si alloys; frequency multipliers; SiGe; SiGe technology; active doubler based; asymmetrically biased differential pairs; conversion gain; current 25 mA; frequency 100 GHz; frequency doubler; size 0.371 mm; size 90 nm; voltage 4.5 V; Bandwidth; Frequency measurement; Harmonic analysis; Impedance matching; Power generation; Power measurement; Silicon germanium; SiGe-BiCMOS technology; SiGe-HBT; active multiplier; frequency doubler; millimeter-wave integrated circuits;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2014 IEEE
Conference_Location :
Coronado, CA
DOI :
10.1109/BCTM.2014.6981275
