Title :
High-speed, waveguide Ge PIN photodiodes for a photonic BiCMOS process
Author :
Lischke, S. ; Knoll, D. ; Zimmermann, L. ; Scheit, A. ; Mai, C. ; Trusch, A. ; Voigt, K. ; Kroh, M. ; Kurps, R. ; Ostrovskyy, P. ; Yamamoto, Y. ; Korndorfer, F. ; Peczek, A. ; Winzer, G. ; Tillack, B.
Author_Institution :
IHP, Frankfurt (Oder), Germany
fDate :
Sept. 28 2014-Oct. 1 2014
Abstract :
Waveguide-coupled, Ge lateral pin photodiodes featuring bandwidths of more than 50GHz and 40Gbps functionality are presented. Non-doping implantations are applied that allow one to reach this performance even under the effect of thermal steps acting when the diodes are integrated in a high-performance BiCMOS process. The effect of these implants is to lower the minority-carrier lifetime(s) and in this way, to reduce bandwidth degradation by minority-carrier diffusion in non-depleted, weakly doped regions.
Keywords :
BiCMOS integrated circuits; carrier lifetime; elemental semiconductors; germanium; p-i-n photodiodes; Ge; bandwidth degradation; high-performance BiCMOS process; minority-carrier diffusion; minority-carrier lifetime; nondepleted weakly doped regions; nondoping implantations; photonic BiCMOS process; thermal steps; waveguide-coupled Ge lateral pin photodiodes; Annealing; Bandwidth; BiCMOS integrated circuits; Implants; PIN photodiodes; Photonics; Silicides; BiCMOS; Ge photodiode; Silicon photonics;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2014 IEEE
Conference_Location :
Coronado, CA
DOI :
10.1109/BCTM.2014.6981279
