DocumentCode :
183738
Title :
Degradation and recovery of high-speed SiGe HBTs under very high reverse EB stress conditions
Author :
Sasso, G. ; Rinaldi, N. ; Fischer, G.G. ; Heinemann, B.
Author_Institution :
DIETI ( Dept. of Electr. Eng. & Inf. Technol.), Univ. Federico II, Naples, Italy
fYear :
2014
fDate :
Sept. 28 2014-Oct. 1 2014
Firstpage :
41
Lastpage :
44
Abstract :
Hot-carrier induced degradation and post-stress recovery of 240/300 fT/fMAX SiGe HBTs are investigated. The investigation includes the impact of stress conditions and lateral scaling. Self-heating is employed as a means to investigate thermal-induced recovery activation and rate.
Keywords :
Ge-Si alloys; heterojunction bipolar transistors; hot carriers; millimetre wave circuits; HBT; SiGe; heterojunction bipolar transistor; high reverse EB stress conditions; hot-carrier induced degradation; lateral scaling; post-stress recovery; thermal-induced recovery activation; Annealing; Degradation; Junctions; Silicon germanium; Stress; Stress measurement; Temperature measurement; SiGe HBT; recovery; reliability; reverse EB stress; self-heating;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2014 IEEE
Conference_Location :
Coronado, CA
Type :
conf
DOI :
10.1109/BCTM.2014.6981282
Filename :
6981282
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=183738
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