• DocumentCode
    183741
  • Title

    Millimeter-wave SiGe RFICs for large-scale phased-arrays

  • Author

    Rebeiz, Gabriel M.

  • Author_Institution
    Univ. of California, San Diego, La Jolla, CA, USA
  • fYear
    2014
  • fDate
    Sept. 28 2014-Oct. 1 2014
  • Firstpage
    56
  • Lastpage
    59
  • Abstract
    This talk will present our latest work on silicon RFICs for phased-array applications with emphasis on very large chips with built-in-self-test capabilities, and for wafer-scale integration. SiGe is shown to be ideal for mm-wave applications due to its high temperature performance (automotive radars, base-stations, defense systems, etc.) and lower power consumption. These chips drastically reduce the cost of microwave and millimeter-wave phased arrays by combining many elements on the same chip, together with digital control. The phased-array chips also allow a much easier packaging scheme using either a multi-layer PCB or wafer-level packages. Examples from 30 GHz to 140 GHz will be presented, together with their system-level performance (imaging radars, packaging, antenna patterns, etc.).
  • Keywords
    Ge-Si alloys; built-in self test; microwave integrated circuits; millimetre wave integrated circuits; wafer level packaging; wafer-scale integration; SiGe; built-in-self-test capabilities; frequency 30 GHz to 140 GHz; microwave phased arrays; millimeter-wave phased arrays; mm-wave applications; multilayer PCB; phased-array applications; phased-array chips; silicon RFIC; wafer-level packages; wafer-scale integration; Built-in self-test; Phased arrays; Radiofrequency integrated circuits; Silicon; Silicon germanium;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2014 IEEE
  • Conference_Location
    Coronado, CA
  • Type

    conf

  • DOI
    10.1109/BCTM.2014.6981284
  • Filename
    6981284