DocumentCode :
183741
Title :
Millimeter-wave SiGe RFICs for large-scale phased-arrays
Author :
Rebeiz, Gabriel M.
Author_Institution :
Univ. of California, San Diego, La Jolla, CA, USA
fYear :
2014
fDate :
Sept. 28 2014-Oct. 1 2014
Firstpage :
56
Lastpage :
59
Abstract :
This talk will present our latest work on silicon RFICs for phased-array applications with emphasis on very large chips with built-in-self-test capabilities, and for wafer-scale integration. SiGe is shown to be ideal for mm-wave applications due to its high temperature performance (automotive radars, base-stations, defense systems, etc.) and lower power consumption. These chips drastically reduce the cost of microwave and millimeter-wave phased arrays by combining many elements on the same chip, together with digital control. The phased-array chips also allow a much easier packaging scheme using either a multi-layer PCB or wafer-level packages. Examples from 30 GHz to 140 GHz will be presented, together with their system-level performance (imaging radars, packaging, antenna patterns, etc.).
Keywords :
Ge-Si alloys; built-in self test; microwave integrated circuits; millimetre wave integrated circuits; wafer level packaging; wafer-scale integration; SiGe; built-in-self-test capabilities; frequency 30 GHz to 140 GHz; microwave phased arrays; millimeter-wave phased arrays; mm-wave applications; multilayer PCB; phased-array applications; phased-array chips; silicon RFIC; wafer-level packages; wafer-scale integration; Built-in self-test; Phased arrays; Radiofrequency integrated circuits; Silicon; Silicon germanium;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2014 IEEE
Conference_Location :
Coronado, CA
Type :
conf
DOI :
10.1109/BCTM.2014.6981284
Filename :
6981284
Link To Document :
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