A broad-band BiCMOS transmitter front-end for 27–36GHz phased array systems

Author

Yu Pei ; Ying Chen ; Leenaerts, Domine M. W.

Author_Institution

NXP Semicond., Eindhoven, Netherlands

fYear

2014

fDate

Sept. 28 2014-Oct. 1 2014

Firstpage

64

Lastpage

67

Abstract

A 27-36 GHz wide-band phased array TX front-end is demonstrated in a 0.25um SiGe:C BiCMOS process. The TX front-end presents a saturation power more than 12.5dBm across 9GHz bandwidth. The front-end provides variable phase shift from 0°~360° with ~10° resolution, and the relative phase shift remains constant in the desired band. A 2-bit amplitude resolution is available for advanced beamforming algorithms. The wide-band PA can be applied in saturation mode and in linear mode due to its high linearity with an OIP3 over 21dBm.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; microwave phase shifters; microwave power amplifiers; radio transmitters; wideband amplifiers; 2-bit amplitude resolution; SiGe:C; SiGe:C BiCMOS process; advanced beamforming algorithms; frequency 27 GHz to 36 GHz; linear mode; relative phase shift; saturation mode; size 0.25 mum; variable phase shift; wideband PA; wideband phased array TX front-end; word length 2 bit; Arrays; Linearity; Power amplifiers; Power generation; Radar; Radio frequency; Transmitters; beam steering; broadband amplifiers; phase shifters; phased arrays; power amplifiers;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2014 IEEE

Conference_Location

Coronado, CA

Type

conf

DOI

10.1109/BCTM.2014.6981286

Filename

6981286