Title :
Linear low-power 13GHz SiGe-Bipolar modulator driver with 7 Vpp differential output voltage swing and on-chip bias tee
Author :
Hettrich, Horst ; Moller, Michael
Author_Institution :
Dept. of Electron. & Circuits, Saarland Univ., Saarbrucken, Germany
fDate :
Sept. 28 2014-Oct. 1 2014
Abstract :
A linear driver amplifier IC with 7 Vpp differential output voltage swing in SiGe Bipolar Technology is presented. The driver includes a novel on-chip bias tee, which allows for energy savings in applications with AC coupled loads compared to a reference implementation without bias tee. In addition to a low-power design, the driver was optimized regarding mutual thermal coupling between the transistors, stability and avalanche breakdown. The linearity of the driver is well suited for the intended application in Ultra Dense Wavelength Division Multiplex (UDWDM) systems, where the third harmonic of the differential output must be attenuated by at least 25 dB (relative to the fundamental amplitude) within the complete operating frequency range from 1.3 GHz to 13 GHz. The complete driver chip draws 250 mA from a 6 V power supply.
Keywords :
avalanche breakdown; bipolar analogue integrated circuits; differential amplifiers; driver circuits; integrated circuit design; low-power electronics; microwave amplifiers; modulators; wavelength division multiplexing; AC coupled loads; SiGe; UDWDM systems; avalanche breakdown; bipolar technology; current 250 mA; differential output voltage swing; driver chip; energy savings; frequency 1.3 GHz to 13 GHz; linear driver amplifier IC; linear low-power bipolar modulator driver; on-chip bias tee; thermal coupling; ultra-dense wavelength division multiplex systems; voltage 6 V; Arrays; Modulation; Oscillators; Resistors; Silicon germanium; System-on-chip; Transistors;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2014 IEEE
Conference_Location :
Coronado, CA
DOI :
10.1109/BCTM.2014.6981290
