Title :
An enhanced 180nm millimeter-wave SiGe BiCMOS technology with fT/fMAX of 260/350GHz for reduced power consumption automotive radar IC´s
Author :
John, J.P. ; Trivedi, V.P. ; Kirchgessner, J. ; Morgan, D. ; To, I. ; Welch, P.
Author_Institution :
Freescale Semicond. Inc., Tempe, AZ, USA
fDate :
Sept. 28 2014-Oct. 1 2014
Abstract :
Several performance improvements on a 180nm SiGe:C BiCMOS technology targeted for improved millimeter-wave performance are described. SiGe HBT performance metrics, including fT, fMAX, and CML gate delay are improved 20-30%. fT/fMAX of 260/350GHz are achieved with a minimum gate delay of 3.2ps, without impacting the thermal budget of the technology. BEOL and ground plane optimization reduced transmission line loss to <;1dB/mm at ~80GHz.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; circuit optimisation; heterojunction bipolar transistors; low-power electronics; millimetre wave integrated circuits; power consumption; road vehicle radar; semiconductor device testing; transmission lines; BEOL; CML gate delay; HBT performance metrics; automotive radar IC; frequency 260 GHz; frequency 350 GHz; ground plane optimization; millimeter-wave BiCMOS technology; power consumption; size 180 nm; thermal budget; time 3.2 ps; transmission line loss; BiCMOS integrated circuits; Heterojunction bipolar transistors; Layout; Metals; Optimization; Silicon germanium; Bipolar transistors; Millimeter wave technology; SiGe; SiGe:C; Silicon bipolar/BiCMOS process technology;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2014 IEEE
Conference_Location :
Coronado, CA
DOI :
10.1109/BCTM.2014.6981292
