A 90nm SiGe BiCMOS technology for mm-wave and high-performance analog applications

Author

Pekarik, J.J. ; Adkisson, J. ; Gray, P. ; Liu, Q. ; Camillo-Castillo, R. ; Khater, M. ; Jain, V. ; Zetterlund, B. ; DiVergilio, A. ; Tian, X. ; Vallett, A. ; Ellis-Monaghan, J. ; Gross, B.J. ; Cheng, P. ; Kaushal, V. ; He, Z. ; Lukaitis, J. ; Newton, K. ;

Author_Institution

Essex Junction, IBM Corp., Poughkeepsie, VT, USA

fYear

2014

fDate

Sept. 28 2014-Oct. 1 2014

Firstpage

92

Lastpage

95

Abstract

We present the electrical characteristics of the first 90nm SiGe BiCMOS technology developed for production in IBM´s large volume 200mm fabrication line. The technology features 300 GHz f_T and 360 GHz f_MAX high performance SiGe HBTs, 135 GHz f_T and 2.5V BV_CEO medium breakdown SiGe HBTs, 90nm Low Power RF CMOS, and a full suite of passive devices. A design kit supports custom and analog designs and a library of digital functions aids logic and memory design. The technology supports mm-wave and high-performance RF/Analog applications.

Keywords

BiCMOS analogue integrated circuits; Ge-Si alloys; heterojunction bipolar transistors; millimetre wave bipolar transistors; IBM; SiGe; SiGe BiCMOS technology; analog designs; digital functions; frequency 135 GHz; frequency 300 GHz; frequency 360 GHz; high performance SiGe HBT; high-performance RF-analog applications; large volume 200mm fabrication line; logic design; low power RF CMOS; medium breakdown SiGe HBT; memory design; mm-wave applications; size 200 mm; size 90 nm; voltage 2.5 V; BiCMOS integrated circuits; CMOS integrated circuits; Heterojunction bipolar transistors; Junctions; Metals; Radio frequency; Silicon germanium; Heterojunction bipolar transistors; Millimeter wave technology; Silicon bipolar process technology; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2014 IEEE

Conference_Location

Coronado, CA

Type

conf

DOI

10.1109/BCTM.2014.6981293

Filename

6981293