Title :
A 90nm SiGe BiCMOS technology for mm-wave and high-performance analog applications
Author :
Pekarik, J.J. ; Adkisson, J. ; Gray, P. ; Liu, Q. ; Camillo-Castillo, R. ; Khater, M. ; Jain, V. ; Zetterlund, B. ; DiVergilio, A. ; Tian, X. ; Vallett, A. ; Ellis-Monaghan, J. ; Gross, B.J. ; Cheng, P. ; Kaushal, V. ; He, Z. ; Lukaitis, J. ; Newton, K. ;
Author_Institution :
Essex Junction, IBM Corp., Poughkeepsie, VT, USA
fDate :
Sept. 28 2014-Oct. 1 2014
Abstract :
We present the electrical characteristics of the first 90nm SiGe BiCMOS technology developed for production in IBM´s large volume 200mm fabrication line. The technology features 300 GHz fT and 360 GHz fMAX high performance SiGe HBTs, 135 GHz fT and 2.5V BVCEO medium breakdown SiGe HBTs, 90nm Low Power RF CMOS, and a full suite of passive devices. A design kit supports custom and analog designs and a library of digital functions aids logic and memory design. The technology supports mm-wave and high-performance RF/Analog applications.
Keywords :
BiCMOS analogue integrated circuits; Ge-Si alloys; heterojunction bipolar transistors; millimetre wave bipolar transistors; IBM; SiGe; SiGe BiCMOS technology; analog designs; digital functions; frequency 135 GHz; frequency 300 GHz; frequency 360 GHz; high performance SiGe HBT; high-performance RF-analog applications; large volume 200mm fabrication line; logic design; low power RF CMOS; medium breakdown SiGe HBT; memory design; mm-wave applications; size 200 mm; size 90 nm; voltage 2.5 V; BiCMOS integrated circuits; CMOS integrated circuits; Heterojunction bipolar transistors; Junctions; Metals; Radio frequency; Silicon germanium; Heterojunction bipolar transistors; Millimeter wave technology; Silicon bipolar process technology; Silicon germanium;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2014 IEEE
Conference_Location :
Coronado, CA
DOI :
10.1109/BCTM.2014.6981293
