Device and circuit performance of SiGe HBTs in 130nm BiCMOS process with fT/fMAX of 250/330GHz

Author

Jain, Vinesh ; Kessler, T. ; Gross, B.J. ; Pekarik, John J. ; Candra, P. ; Gray, P.B. ; Sadhu, B. ; Valdes-Garcia, A. ; Cheng, Peng ; Camillo-Castillo, R.A. ; Newton, Kim ; Natarajan, Arutselvan ; Reynolds, S.K. ; Harame, D.L.

Author_Institution

IBM, Essex Junction, VT, USA

fYear

2014

fDate

Sept. 28 2014-Oct. 1 2014

Firstpage

96

Lastpage

99

Abstract

A high performance (HP) SiGe HBT in IBM´s 130nm SiGe BiCMOS8XP technology demonstrating peak f_T/f_MAX of 250/330GHz is reported for mm-wave and high performance RF/analog applications. The HBT has been developed as an optional device within the existing IBM 130nm SiGe BiCMOS8HP technology which includes a full suite of 130nm RFCMOS FETs, passives and mm-wave distributive passive devices. CML ring oscillators fabricated using HP HBTs in 8XP demonstrate 16% lower delay per stage than 8HP. A VCO design in 8XP has 40% lower phase noise at 36GHz compared to an identical design in 8HP. LNA and PA designs in 8XP show 6dB and 3dB higher gain respectively at 94GHz.

Keywords

BiCMOS analogue integrated circuits; Ge-Si alloys; field effect transistor circuits; heterojunction bipolar transistors; integrated circuit design; integrated circuit testing; low noise amplifiers; millimetre wave integrated circuits; phase noise; power amplifiers; voltage-controlled oscillators; BiCMOS process; CML ring oscillators; HP HBT; IBM BiCMOS8HP technology; IBM BiCMOS8XP technology; LNA designs; PA designs; RF CMOS FET; RF-analog applications; SiGe; VCO design; frequency 250 GHz; frequency 330 GHz; frequency 36 GHz; frequency 94 GHz; low-noise amplifier; mm-wave distributive passive devices; phase noise; power amplifier; size 130 nm; BiCMOS integrated circuits; Gain; Heterojunction bipolar transistors; Ring oscillators; Silicon germanium; Voltage-controlled oscillators; BiCMOS; HBT; LNA; PA; SiGe; VCO; mm-wave; ring oscillator;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2014 IEEE

Conference_Location

Coronado, CA

Type

conf

DOI

10.1109/BCTM.2014.6981294

Filename

6981294