Title :
Low-voltage organic field-effect transistors for flexible electronics
Author :
Zschieschang, Ute ; Rodel, Reinhold ; Kraft, Ulrike ; Takimiya, Kazuo ; Zaki, Tarek ; Letzkus, Florian ; Butschke, Jorg ; Richter, H. ; Burghartz, Joachim N. ; Wei Xiong ; Murmann, Boris ; Klauk, Hagen
Author_Institution :
Max Planck Inst. for Solid State Res., Stuttgart, Germany
fDate :
Sept. 28 2014-Oct. 1 2014
Abstract :
A process for the fabrication of bottom-gate, top-contact (inverted staggered) organic thin-film transistors (TFTs) with channel lengths as short as 1 μm on flexible plastic substrates has been developed. The TFTs employ vacuum-deposited small-molecule semiconductors and a low-temperature-processed gate dielectric that is sufficiently thin to allow the TFTs to operate with voltages of about 3 V. The p-channel TFTs have an effective field-effect mobility of about 1 cm2/Vs, an on/off ratio of 107, and a signal propagation delay (measured in 11-stage ring oscillators) of 300 ns per stage. For the n-channel TFTs, an effective field-effect mobility of about 0.06 cm2/Vs, an on/off ratio of 106, and a signal propagation delay of 17 μs per stage have been obtained.
Keywords :
flexible electronics; organic field effect transistors; thin film transistors; vacuum deposited coatings; bottom-gate top-contact organic TFT; field-effect mobility; flexible electronics; flexible plastic substrates; inverted staggered thin-film transistors; low-temperature-processed gate dielectric; low-voltage organic field-effect transistors; n-channel TFT; on-off ratio; p-channel TFT; signal propagation delay; vacuum-deposited small-molecule semiconductors; Logic gates; Organic semiconductors; Semiconductor device measurement; Substrates; Thin film transistors; Transconductance; Voltage measurement;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2014 IEEE
Conference_Location :
Coronado, CA
DOI :
10.1109/BCTM.2014.6981295
