DocumentCode
183772
Title
Integration challenges for high-performance carbon nanotube logic
Author
Hannon, James B. ; Park, Heejung ; Tulevski, George S. ; Haensch, Wilfried
Author_Institution
Res. Div., T.J. Watson Res. Center, IBM, Yorktown Heights, NY, USA
fYear
2014
fDate
Sept. 28 2014-Oct. 1 2014
Firstpage
123
Lastpage
127
Abstract
As the scaling of silicon-based devices becomes more challenging, alternative channel materials are being actively explored. One approach is to replace the silicon channel with nanoparticles - for example, carbon nanotubes - that offer higher performance and better scaling potential. However, the incorporation of nanoparticles requires the development of new “bottom up” fabrication techniques to grow or place particles at precise locations on a substrate. The inherent randomness of these assembly processes has an obvious impact on device yield, which must be taken into account in optimizing the layout of a device. Here we describe a simple statistical analysis of device yield that can give insight into the self-assembly process, and is particularly useful for characterizing nanoparticle self-assembly from solution.
Keywords
carbon nanotubes; integrated circuit yield; nanoparticles; self-assembly; statistical analysis; assembly processes; bottom up fabrication techniques; carbon nanotube logic; device yield; nanoparticles; self-assembly process; silicon channel; silicon-based devices scaling; statistical analysis; Carbon nanotubes; Hafnium compounds; Nanoparticles; Sociology; Statistics; Substrates; Surface treatment; carbon nanotubes; nanoparticles; placement; self assembly;
fLanguage
English
Publisher
ieee
Conference_Titel
Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2014 IEEE
Conference_Location
Coronado, CA
Type
conf
DOI
10.1109/BCTM.2014.6981298
Filename
6981298
Link To Document