DocumentCode :
183772
Title :
Integration challenges for high-performance carbon nanotube logic
Author :
Hannon, James B. ; Park, Heejung ; Tulevski, George S. ; Haensch, Wilfried
Author_Institution :
Res. Div., T.J. Watson Res. Center, IBM, Yorktown Heights, NY, USA
fYear :
2014
fDate :
Sept. 28 2014-Oct. 1 2014
Firstpage :
123
Lastpage :
127
Abstract :
As the scaling of silicon-based devices becomes more challenging, alternative channel materials are being actively explored. One approach is to replace the silicon channel with nanoparticles - for example, carbon nanotubes - that offer higher performance and better scaling potential. However, the incorporation of nanoparticles requires the development of new “bottom up” fabrication techniques to grow or place particles at precise locations on a substrate. The inherent randomness of these assembly processes has an obvious impact on device yield, which must be taken into account in optimizing the layout of a device. Here we describe a simple statistical analysis of device yield that can give insight into the self-assembly process, and is particularly useful for characterizing nanoparticle self-assembly from solution.
Keywords :
carbon nanotubes; integrated circuit yield; nanoparticles; self-assembly; statistical analysis; assembly processes; bottom up fabrication techniques; carbon nanotube logic; device yield; nanoparticles; self-assembly process; silicon channel; silicon-based devices scaling; statistical analysis; Carbon nanotubes; Hafnium compounds; Nanoparticles; Sociology; Statistics; Substrates; Surface treatment; carbon nanotubes; nanoparticles; placement; self assembly;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2014 IEEE
Conference_Location :
Coronado, CA
Type :
conf
DOI :
10.1109/BCTM.2014.6981298
Filename :
6981298
Link To Document :
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