Title :
A 27GHz, 31dBm power amplifier in a 0.25μm SiGe:C BiCMOS technology
Author :
Essing, J. ; Leenaerts, D. ; Mahmoudi, R.
Author_Institution :
Mixed-Signal Microelectron. Group, Eindhoven Univ. of Technol., Eindhoven, Netherlands
fDate :
Sept. 28 2014-Oct. 1 2014
Abstract :
This paper describes an 8-way in-phase current combining power amplifier (PA) for Ka-band applications implemented in a 0.25um SiGe:C BiCMOS technology. The PA achieves a saturated output power of 29.7dBm at 27GHz with a maximum PAE of 10.5%. After applying load-pull, this output power increases further to a level of 31dBm with a maximum PAE of 13%. The small-signal gain is 24.5dB and the saturated gain is more than 14.7dB in the band of interest. The consumed area is only 2.83mm2.
Keywords :
BiCMOS analogue integrated circuits; Ge-Si alloys; carbon; integrated circuit design; microwave amplifiers; power amplifiers; BiCMOS technology; Ka-band applications; PAE; SiGe:C; frequency 27 GHz; gain 24.5 dB; power amplifier; saturated gain; size 0.25 mum; size 2.83 mm; small-signal gain; BiCMOS integrated circuits; Frequency measurement; Impedance; Inductors; Power amplifiers; Power generation; Voltage measurement; SiGe BiCMOS; millimeter-wave; power amplifier; power combining;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2014 IEEE
Conference_Location :
Coronado, CA
DOI :
10.1109/BCTM.2014.6981301
