• DocumentCode
    183779
  • Title

    A 27GHz, 31dBm power amplifier in a 0.25μm SiGe:C BiCMOS technology

  • Author

    Essing, J. ; Leenaerts, D. ; Mahmoudi, R.

  • Author_Institution
    Mixed-Signal Microelectron. Group, Eindhoven Univ. of Technol., Eindhoven, Netherlands
  • fYear
    2014
  • fDate
    Sept. 28 2014-Oct. 1 2014
  • Firstpage
    143
  • Lastpage
    146
  • Abstract
    This paper describes an 8-way in-phase current combining power amplifier (PA) for Ka-band applications implemented in a 0.25um SiGe:C BiCMOS technology. The PA achieves a saturated output power of 29.7dBm at 27GHz with a maximum PAE of 10.5%. After applying load-pull, this output power increases further to a level of 31dBm with a maximum PAE of 13%. The small-signal gain is 24.5dB and the saturated gain is more than 14.7dB in the band of interest. The consumed area is only 2.83mm2.
  • Keywords
    BiCMOS analogue integrated circuits; Ge-Si alloys; carbon; integrated circuit design; microwave amplifiers; power amplifiers; BiCMOS technology; Ka-band applications; PAE; SiGe:C; frequency 27 GHz; gain 24.5 dB; power amplifier; saturated gain; size 0.25 mum; size 2.83 mm; small-signal gain; BiCMOS integrated circuits; Frequency measurement; Impedance; Inductors; Power amplifiers; Power generation; Voltage measurement; SiGe BiCMOS; millimeter-wave; power amplifier; power combining;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2014 IEEE
  • Conference_Location
    Coronado, CA
  • Type

    conf

  • DOI
    10.1109/BCTM.2014.6981301
  • Filename
    6981301
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=183779