Title :
An even harmonic type direct conversion SiGe-MMIC receiver for W-CDMA mobile terminals
Author :
Taniguchi, E. ; Shimozawa, M. ; Ikushima, T. ; Sadahiro, K. ; Katsura, T. ; Maeda, K. ; Itoh, K. ; Suematsu, N. ; Takagi, T. ; Ishida, O.
Author_Institution :
Inf. Technol. R&D Center, Mitsubishi Electr. Corp., Kanagawa, Japan
Abstract :
An even harmonic type direct conversion MMIC receiver for W-CDMA mobile terminals in SiGe HBT technology is described. A 2-stage low noise amplifier (LNA) and two self biased anti-parallel diode pairs (APDPs) for even harmonic mixer (EH-MIX) are integrated into a single chip. The LNA employed dual bias feed circuit to improve the output power and linearity. The EH-MIX can obtain high IIP2 by using APDP. Noise performance of Schottky barrier diode (SBD) for APDP fabricated in SiGe process is lower than that of conventional SBD in the market. Both fabricated LNA and EH-MIX demonstrated high RF performances, and they are applicable to RF front-end of W-CDMA mobile terminals.
Keywords :
Ge-Si alloys; MMIC mixers; UHF integrated circuits; UHF mixers; bipolar MMIC; bipolar analogue integrated circuits; cellular radio; code division multiple access; radio receivers; HBT technology; MMIC receiver; Personal Handyphone System; RF front-end; Schottky barrier diode; SiGe; W-CDMA mobile terminals; dual bias feed circuit; even harmonic quadrature mixer; even harmonic type direct conversion; high RF performances; linearity; output power; self biased antiparallel diode pairs; single chip; two-stage low noise amplifier; Acoustical engineering; Germanium silicon alloys; Heterojunction bipolar transistors; Integrated circuit technology; Low-noise amplifiers; MMICs; Multiaccess communication; Radio frequency; Schottky diodes; Silicon germanium;
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 2002 IEEE
Conference_Location :
Seattle, WA, USA
Print_ISBN :
0-7803-7246-8
DOI :
10.1109/RFIC.2002.1011940
