W-band SiGe power amplifiers

Author

Song, Peter ; Ulusoy, A. Cagri ; Schmid, Robert L. ; Zeinolabedinzadeh, Saeed N. ; Cressler, John D.

Author_Institution

Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA

fYear

2014

fDate

Sept. 28 2014-Oct. 1 2014

Firstpage

151

Lastpage

154

Abstract

This paper presents W-band cascode power amplifiers implemented in a 90 nm SiGe BiCMOS technology. The one-way cascode PA achieves a saturated output power of 18.0 dBm with 17.2% peak PAE at 93 GHz. The two-way power-combined cascode PA achieves a saturated output power of 20.8 dBm with 14.5% peak PAE at 93 GHz. The one-way PA and two-way power-combined SiGe PAs occupy an area of 0.29 mm² and 0.57 mm² without pads, respectively. To the authors´ best knowledge, this work demonstrates the highest PAEs and associated output powers achieved by W-band PAs in any silicon-based technology to date.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; millimetre wave power amplifiers; PAE; SiGe; SiGe BiCMOS technology; W-band cascode power amplifiers; efficiency 14.5 percent; efficiency 17.2 percent; frequency 93 GHz; one-way cascode PA; silicon-based technology; size 90 nm; two-way power-combined SiGe PA; two-way power-combined cascode PA; Gain; Loss measurement; Metals; Power amplifiers; Power generation; Power measurement; Silicon germanium; SiGe; W-band; millimeter-wave integrated circuits; power amplifier; silicon-germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2014 IEEE

Conference_Location

Coronado, CA

Type

conf

DOI

10.1109/BCTM.2014.6981303

Filename

6981303