A 2.6 V GSM/PCN dual band variable gain low noise RF down conversion mixer

Author

Bonkee Kim ; Kyung-Suc Nah ; Tae-Won Ahn ; Han-Il Lee ; Je-Kwang Cho ; Byeong-Ha Park

Author_Institution

RF projects, Samsung Electron. Co. Ltd., Kyunggi, South Korea

fYear

2002

fDate

3-4 June 2002

Firstpage

137

Lastpage

140

Abstract

As a building block for a GSM/PCN dual band RF transceiver IC, a low noise variable gain RF down conversion mixer is designed and fabricated using a 15 GHz-f/sub T/, 0.5 /spl mu/m 3-metal 2-poly BiCMOS process. Careful consideration is paid to the low noise performance of the mixer. Moreover, using constant-impedance input/output stages, RF input and IF output return losses are maintained under -16 dB for both high and low gain modes. Measured gain and DSB noise figure of the mixer are 10.9 dB and 9.1 dB, respectively, for GSM band, and 9.6 dB and 8.1 dB, respectively, for PCN band. Gain difference between high and low gain modes is 11 dB and 11.8 dB for GSM and PCN, respectively. Total DC currents are 13 mA for GSM and 11.5 mA for PCN from a 3 V supply voltage. Mixer performance is maintained with supply voltage down to 2.6 V.

Keywords

BiCMOS analogue integrated circuits; UHF frequency convertors; UHF integrated circuits; UHF mixers; cellular radio; integrated circuit design; integrated circuit noise; personal communication networks; transceivers; 0.5 micron; 10.9 dB; 13 mA; 15 GHz; 1840 MHz; 2.6 V; 3 V; 3-metal 2-poly BiCMOS process; 8.1 dB; 9.1 dB; 9.6 dB; 940 MHz; DSB noise figure; GSM/PCN dual band RF transceiver IC; GSM/PCN dual band variable gain low noise RF down conversion mixer; IF output return losses; RF input return losses; constant-impedance input/output stages; high gain mode; low gain mode; low noise variable gain RF down conversion mixer; supply voltage; total DC currents; BiCMOS integrated circuits; Dual band; GSM; Gain; Integrated circuit noise; Personal communication networks; Radio frequency; Radiofrequency integrated circuits; Transceivers; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits (RFIC) Symposium, 2002 IEEE

Conference_Location

Seattle, WA, USA

ISSN

1529-2517

Print_ISBN

0-7803-7246-8

Type

conf

DOI

10.1109/RFIC.2002.1011941

Filename

1011941