Title :
A 3-33 GHz PHEMT MMIC distributed drain mixer
Author :
Kuo-Liang Deng ; Huei Wang
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Abstract :
A compact wide-band GaAs PHEMT MMIC distributed drain mixer covering RF frequencies from 3 to 33 GHz is reported. The measured results show that the conversion loss of the distributed drain mixer is better than 4 dB over the frequency range at an LO power of 13 dBm without IF amplification. Using the matching circuit in the output of the FETs, LO-to-IF and LO-to-RF isolations are better than 19 dB from 3 to 33 GHz. This mixer utilizes a simple distributed topology with single-gate HEMTs and achieves very broad band performance comparable to cascode or dual-gate distributed mixers. The overall chip size of this MMIC is only 1.7/spl times/1 mm/sup 2/.
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC mixers; field effect MMIC; gallium arsenide; impedance matching; 3 to 33 GHz; 4 dB; GaAs; LO power; LO-to-IF isolation; LO-to-RF isolation; broad band performance; conversion loss; distributed topology; matching circuit; overall chip size; single-gate HEMTs; wide-band GaAs PHEMT MMIC distributed drain mixer; Frequency conversion; Frequency measurement; Gallium arsenide; Loss measurement; MMICs; Mixers; PHEMTs; Power measurement; Radio frequency; Wideband;
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 2002 IEEE
Conference_Location :
Seattle, WA, USA
Print_ISBN :
0-7803-7246-8
DOI :
10.1109/RFIC.2002.1011944