Temperature impact on the in-situ S-parameter calibration in advanced SiGe technologies

Author

Rumiantsev, Andrej ; Doerner, Ralf ; Korndoerfer, Falk

Author_Institution

MPI Corp., Chu-Pei, Taiwan

fYear

2014

fDate

Sept. 28 2014-Oct. 1 2014

Firstpage

171

Lastpage

174

Abstract

This paper analyzes the in-situ S-parameter multiline TRL and the transfer TMR calibration methods for the sensitivity to the thermal variation of electrical characteristics of calibration standards. The standards were realized in IHP´s SG13 130 nm SiGe:C BiCMOS process. The measurement experiment was performed for the frequency range up to 110 GHz. We demonstrate that the calibration error caused by thermal instability of electrical characteristic of standards is in order of magnitude of the system drift error and, thus, negligible.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; S-parameters; calibration; carbon; thermal stability; IHP; SG13 130 nm SiGe:C BiCMOS process; SiGe:C; advanced SiGe technologies; calibration error; calibration standards; electrical characteristics; in-situ S-parameter multiline TRL; measurement experiment; size 130 nm; system drift error; thermal instability; thermal variation; transfer TMR calibration methods; Calibration; Impedance; Scattering parameters; Standards; Temperature; Temperature measurement; Tunneling magnetoresistance; BiCMOS; S-parameter calibration; device characterization; mm-wave measurements;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2014 IEEE

Conference_Location

Coronado, CA

Type

conf

DOI

10.1109/BCTM.2014.6981307

Filename

6981307