• DocumentCode
    183792
  • Title

    A simple and accurate method for extracting the emitter and thermal resistance of BJTs and HBTs

  • Author

    Pawlak, A. ; Lehmann, S. ; Schroter, M.

  • Author_Institution
    Tech. Univ. Dresden, Dresden, Germany
  • fYear
    2014
  • fDate
    Sept. 28 2014-Oct. 1 2014
  • Firstpage
    175
  • Lastpage
    178
  • Abstract
    A simple yet accurate extraction method for the emitter and thermal resistance of bipolar transistors is presented. Only DC measurements taken on a thermally controlled wafer prober are required. The knowledge of the collector resistance is preferable, but not mandatory. The method yields excellent results when applied to advanced HBT technologies.
  • Keywords
    heterojunction bipolar transistors; thermal resistance; BJT; HBT; accurate method; bipolar transistors; emitter resistance; extraction method; thermal resistance; thermally controlled wafer prober; Decision support systems; Parameter extraction; compact bipolar transistor models; emitter resis­tance; external collector resistance; self-heating; thermal resistance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2014 IEEE
  • Conference_Location
    Coronado, CA
  • Type

    conf

  • DOI
    10.1109/BCTM.2014.6981308
  • Filename
    6981308
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=183792