• DocumentCode
    1837937
  • Title

    A single-chip 24 GHz receiver front-end using a commercially available SiGe HBT foundry process

  • Author

    Sonmez, E. ; Trasser, A. ; Schad, K.-B. ; Abele, R. ; Schumacher, H.

  • Author_Institution
    Dept. of Electron Devices & Circuits, Ulm Univ., Germany
  • fYear
    2002
  • fDate
    3-4 June 2002
  • Firstpage
    159
  • Lastpage
    162
  • Abstract
    The authors have demonstrated a fully integrated receiver frontend addressing the ISM-Band at 24 GHz utilizing a standard SiGe HBT MMIC process with a relaxed emitter scaling of 1.2 /spl mu/m, for the first time. Extremely compact circuit design and layout techniques are applied to a mature Si/SiGe technology, resulting in a low-cost integrated circuit enabling consumer-oriented systems at Ka band. The integrated components are a preamplifier, a mixer with an IF buffer and a local oscillator. The conversion gain is determined to be 16.3 dB for an intermediate frequency of 100 MHz.
  • Keywords
    Ge-Si alloys; MMIC amplifiers; MMIC mixers; MMIC oscillators; bipolar MMIC; elemental semiconductors; heterojunction bipolar transistors; integrated circuit layout; preamplifiers; semiconductor materials; 1.2 micron; 16.3 dB; 24 GHz; HBT foundry process; IF buffer; ISM-band; Ka band; MMIC process; Si-SiGe; Si/SiGe; consumer-oriented systems; conversion gain; intermediate frequency; layout techniques; local oscillator; preamplifier; receiver front-end; relaxed emitter scaling; Circuit synthesis; Germanium silicon alloys; Heterojunction bipolar transistors; Integrated circuit layout; Integrated circuit technology; Local oscillators; MMICs; Mixers; Preamplifiers; Silicon germanium;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radio Frequency Integrated Circuits (RFIC) Symposium, 2002 IEEE
  • Conference_Location
    Seattle, WA, USA
  • ISSN
    1529-2517
  • Print_ISBN
    0-7803-7246-8
  • Type

    conf

  • DOI
    10.1109/RFIC.2002.1011946
  • Filename
    1011946