Title :
A simple modeling of the early voltage of MOSFETs in weak and moderate inversion
Author :
Radin, R.L. ; Moreira, G.L. ; Galup-Montoro, C. ; Schneider, M.C.
Author_Institution :
Electr. Eng. Dept., Fed. Univ. of Santa Catarina, Florianopolis
Abstract :
This paper presents a simple model of the Early voltage for the MOS transistor operating in weak and moderate inversion. The model is based on a decomposition of the transistor channel into a region where the gradual-channel approximation holds and a region that is modeled as a reverse- biased junction. Measurements of the characteristics of both n- and p-channel transistors with different channel lengths in a 0.35 mum technology demonstrate the feasibility of the proposed model.
Keywords :
MOSFET; network synthesis; MOS transistor; MOSFET; channel lengths; gradual-channel approximation; p-channel transistors; reverse- biased juntion; transistor channel; Capacitance measurement; Channel bank filters; Current measurement; Electrostatic analysis; Electrostatic measurements; Length measurement; MOSFETs; Semiconductor device modeling; Surface fitting; Voltage;
Conference_Titel :
Circuits and Systems, 2008. ISCAS 2008. IEEE International Symposium on
Conference_Location :
Seattle, WA
Print_ISBN :
978-1-4244-1683-7
Electronic_ISBN :
978-1-4244-1684-4
DOI :
10.1109/ISCAS.2008.4541769
