DocumentCode :
1838040
Title :
Test results of total ionizing dose conducted at the Jet Propulsion Laboratory [bipolar and CMOS ICs]
Author :
Rivas, Rosa M. ; Johnston, Allan H. ; Miyahira, Tetsuo F. ; Rax, Bernard G. ; Wiedeman, Michael D.
Author_Institution :
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
fYear :
2004
fDate :
22-22 July 2004
Firstpage :
36
Lastpage :
41
Abstract :
This paper reports recent total ionizing dose (TID) test results obtained at JPL. Several device samples were analyzed exhibiting significant failure levels and enhanced low dose rate sensitivity (ELDRS) effects under biased and unbiased conditions.
Keywords :
CMOS integrated circuits; bipolar integrated circuits; gamma-ray effects; integrated circuit testing; CMOS IC; ELDRS effects; HDL; LDL; TID testing; biased conditions; bipolar IC; enhanced low dose rate sensitivity; failure levels; gamma ray tests; high dose level; low dose level; total ionizing dose; unbiased conditions; Automatic testing; Laboratories; Manufacturing; Performance evaluation; Propulsion; Space technology; System testing; Telephony; Temperature measurement; Temperature sensors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Radiation Effects Data Workshop, 2004 IEEE
Conference_Location :
Atlanta, GA, USA
Print_ISBN :
0-7803-8697-3
Type :
conf
DOI :
10.1109/REDW.2004.1352901
Filename :
1352901
Link To Document :
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