Title :
The low-power and low-area PWM by light intensity for photoflash in 0.35-μm CMOS
Author :
Lee, Woo Kwan ; Choi, Won Ho ; Min, Young Jae ; Kim, Hoon Ki ; Kim, Soo-Won
Author_Institution :
Dept. of Electron. Eng., Korea Univ., Seoul
Abstract :
The pulse width modulator by light intensity is presented. Light intensity sensing is achieved by using capacitor, photodiode, and comparator. And IGBT driver has short circuit protection using delay cell. The pulse width modulator has the operating range of Vms from 0.5 V to 2.9 V. The pulse width modulator fabricated in 0.35-mum CMOS technology occupies 0.85 mm times 0.56 mm. This circuit consumes 1.2 mA at 300 Hz and 3.0 V.
Keywords :
CMOS integrated circuits; capacitors; comparators (circuits); driver circuits; insulated gate bipolar transistors; modulators; photodiodes; pulse width modulation; transistors; CMOS technology; IGBT driver; capacitor; comparator; current 1.2 mA; delay cell; light intensity; photodiode; pulse width modulator; short circuit protection; size 0.35 mum; voltage 0.5 V to 2.9 V; voltage 3 V; CMOS technology; Capacitors; Driver circuits; Insulated gate bipolar transistors; Intensity modulation; Optical modulation; Photodiodes; Protection; Pulse width modulation; Space vector pulse width modulation;
Conference_Titel :
Circuits and Systems, 2008. ISCAS 2008. IEEE International Symposium on
Conference_Location :
Seattle, WA
Print_ISBN :
978-1-4244-1683-7
Electronic_ISBN :
978-1-4244-1684-4
DOI :
10.1109/ISCAS.2008.4541770
