An electrothermal PIN diode model with substrate injection

Author

DiVergilio, Adam W. ; Pekarik, John J. ; Jain, Vinesh

Author_Institution

IBM Corp., Essex Junction, VT, USA

fYear

2014

fDate

Sept. 28 2014-Oct. 1 2014

Firstpage

207

Lastpage

210

Abstract

This paper presents a compact model for an integrated 3-terminal PIN diode suitable for SPICE simulation. The model described within represents a significant extension to the standard 2-terminal diode model of SPICE, capturing phenomena critical to the accurate prediction of diode behavior in modern integrated process technologies. In particular, the inclusion of self-consistent electrothermal modeling and substrate injection effects is key to improving simulation accuracy for diodes operating in a forward conductive state, such as would be common for PIN diodes. The model is implemented in Verilog-A and hardware-verified results are presented for a 90nm SiGe BiCMOS technology featuring a high-performance integrated PIN diode.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; SPICE; hardware description languages; p-i-n diodes; semiconductor device models; 2-terminal diode model; SPICE simulation; SiGe; SiGe BiCMOS technology; Verilog-A; diode behavior; hardware-verified results; high-performance integrated PIN diode; integrated 3-terminal PIN diode; modern integrated process technologies; self-consistent electrothermal modeling; substrate injection effects; Computational modeling; Hardware design languages; Integrated circuit modeling; Mathematical model; PIN photodiodes; Semiconductor device modeling; Substrates; Compact Model; PIN Diode; SPICE; Semiconductor Device Modeling; Verilog-A;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2014 IEEE

Conference_Location

Coronado, CA

Type

conf

DOI

10.1109/BCTM.2014.6981316

Filename

6981316