• DocumentCode
    1838063
  • Title

    SEE sensitivities of selected advanced flash and first-in-first-out memories

  • Author

    Koga, R. ; Tran, V. ; George, J. ; Crawford, K. ; Crain, S. ; Zakrzewski, M. ; Yu, P.

  • Author_Institution
    Aerosp. Corp., El Segundo, CA, USA
  • fYear
    2004
  • fDate
    22-22 July 2004
  • Firstpage
    47
  • Lastpage
    53
  • Abstract
    Single event effects sensitivity measurements of advanced flash and first-in-first-out memories have been made. While many upsets are transients, other upsets initiated by high LET ions are semi-permanent.
  • Keywords
    flash memories; integrated circuit testing; integrated memory circuits; radiation effects; transient response; FIFO memories; SEE sensitivities; first-in-first-out memories; flash memories; high LET ions; semi-permanent upsets; single event effects; transient upsets; CMOS technology; Clocks; Control systems; Flash memory; Manufacturing; Nonvolatile memory; Random access memory; Read-write memory; Single event upset; Testing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radiation Effects Data Workshop, 2004 IEEE
  • Conference_Location
    Atlanta, GA, USA
  • Print_ISBN
    0-7803-8697-3
  • Type

    conf

  • DOI
    10.1109/REDW.2004.1352903
  • Filename
    1352903
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1838063