Title :
SEE and TID test results of 1 Gb flash memories
Author :
Langley, Tilan E. ; Murray, Paul
Author_Institution :
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
Abstract :
Single-event effects and total ionizing dose test results of 1 Gb flash memories are reported in this paper. Effects characterized include single-event upset, latchup and functional interrupt. New effects are discussed and compared with previous results.
Keywords :
flash memories; gamma-ray effects; integrated circuit testing; ion beam effects; 1 Gbit; SEE; SEU; TID; flash memories; functional interrupt; gamma radiation testing; heavy ion testing; latchup; single-event effects; single-event upset; total ionizing dose testing; Aerospace testing; Flash memory; Instruments; Laboratories; Performance evaluation; Propulsion; Single event upset; Space technology; System testing; Temperature;
Conference_Titel :
Radiation Effects Data Workshop, 2004 IEEE
Conference_Location :
Atlanta, GA, USA
Print_ISBN :
0-7803-8697-3
DOI :
10.1109/REDW.2004.1352905
