Title :
Dynamic SDRAM SEFI detection and recovery test results
Author :
Guertin, Steven M. ; Patterson, Jeffrey D. ; Nguyen, Duc N.
Author_Institution :
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
Abstract :
Single event functionality interrupt (SEFI) results are presented for Hynix SDRAMS. The SEFI response threshold is below LET 9.9 Mev-cm 2/mg and the saturated cross section is 6×10 -5cm 2. Dynamic SEFI identification was made, and in-situ recovery restored functionality. Verification results of the identification algorithm are presented. An observed high current radiation response is also presented.
Keywords :
DRAM chips; SRAM chips; integrated circuit testing; radiation effects; SDRAMS; SEFI identification algorithm; SEFI in-situ recovery; SEFI response threshold; SEU; dynamic SEFI detection; high current radiation response; saturated cross section; single event functionality interrupts; Circuit testing; Error analysis; Laboratories; Power system management; Propulsion; Radiation effects; SDRAM; Single event upset; Space vehicles; Technology management;
Conference_Titel :
Radiation Effects Data Workshop, 2004 IEEE
Conference_Location :
Atlanta, GA, USA
Print_ISBN :
0-7803-8697-3
DOI :
10.1109/REDW.2004.1352906
