DocumentCode :
1838190
Title :
Heavy ion SEE testing of Xilinx one-time programmable configuration PROMs
Author :
George, Jeffrey ; Swift, Gary ; Guertin, Steven ; Carmichael, Carl ; Rezgui, Sana ; Koga, Rocky
Author_Institution :
Aerosp. Corp., El Segundo, CA, USA
fYear :
2004
fDate :
22-22 July 2004
Firstpage :
72
Lastpage :
78
Abstract :
We compare the results of single event effects in two sizes and grades of programmable read-only-memories (PROMs) in the Xilinx 17xx device family. The main failure modes include address upsets, end-of-part failures, and a low-power standby mode requiring a power cycle to recover.
Keywords :
PROM; integrated circuit reliability; integrated circuit testing; ion beam effects; address upsets; end-of-part failures; failure modes; heavy ion SEE testing; heavy ion beams; low-power standby mode; one-time programmable configuration PROM; power cycle reset; programmable read-only-memories; single event effects; Aerospace testing; Clocks; Counting circuits; EPROM; Field programmable gate arrays; Laboratories; PROM; Propulsion; Radiation detectors; Space technology;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Radiation Effects Data Workshop, 2004 IEEE
Conference_Location :
Atlanta, GA, USA
Print_ISBN :
0-7803-8697-3
Type :
conf
DOI :
10.1109/REDW.2004.1352908
Filename :
1352908
Link To Document :
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