Gain controllable very low voltage (/spl les/ 1 V) 8-9 GHz integrated CMOS LNAs

Author

Tsang, T.K.K. ; El-Gamal, M.N.

Author_Institution

Microelectron. & Comput. Syst. Lab., McGill Univ., Montreal, Que., Canada

fYear

2002

fDate

3-4 June 2002

Firstpage

205

Lastpage

208

Abstract

This paper presents the design and experimental results of two CMOS low-voltage low noise amplifiers intended for future wireless applications, and featuring a new and very simple gain control mechanism. Implemented In a standard 0.18 /spl mu/m CMOS process, and operating from a supply voltage of 1 V, the 8 GHz LNA exhibits a power gain of 13.7 dB and a noise figure of 3.2 dB, while the 9 GHz LNA achieves a forward transmission S/sub 21/ of 12.2 dB and a noise figure of 3.7 dB. Both circuits have a gain tuning range of over 10 dB, and can operate from a supply voltage as low as 0.7 V.

Keywords

CMOS analogue integrated circuits; MMIC amplifiers; circuit tuning; field effect MMIC; inductors; low-power electronics; transceivers; 0.18 micron; 0.7 V; 1 V; 13.7 dB; 3.2 dB; 3.7 dB; 8 to 9 GHz; CMOS; forward transmission; gain control mechanism; gain controllable LNAs; gain tuning range; low noise amplifiers; power gain; supply voltage; very low voltage circuitry; wireless applications; CMOS technology; Circuits; Frequency; Impedance; Inductors; Low voltage; Noise figure; Prototypes; Topology; Voltage control;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits (RFIC) Symposium, 2002 IEEE

Conference_Location

Seattle, WA, USA

ISSN

1529-2517

Print_ISBN

0-7803-7246-8

Type

conf

DOI

10.1109/RFIC.2002.1012032

Filename

1012032