Title :
A radiation-hardened high-precision resolver-to-digital converter (RDC)
Author :
Nowlin, N. ; McEndree, S. ; Butcher, D.
Author_Institution :
Microelectron. R&D Div., ATK Mission Res., Albuquerque, NM, USA
Abstract :
We report for the first time radiation data on a radiation-hardened high-precision resolver-to-digital converter (RDC). The RDC has a maximum of 16 bits precision, and is manufactured in a total-dose hardened 0.6 μm CMOS process. Single-event (SEL) and dose-rate latchup hardening are designed-in using guard rings and DICE latches. Our results show total-dose hardness levels of 1 Mrad(SiO 2), SEL and dose-rate latchup immunity, and geosynchronous-orbit single-event-upset (SEU) rates of 5×10 -5 upsets/device/day.
Keywords :
CMOS integrated circuits; X-ray effects; analogue-digital conversion; gamma-ray effects; radiation hardening (electronics); 0.6 micron; 1 Mrad; DICE latches; SEL; SEU; dose rate; dose-rate latchup immunity; gamma rays; geosynchronous-orbit single-event-upset rates; guard rings; low-energy X-rays; radiation testing; radiation-hardened high-precision RDC; resolver-to-digital converter; single event effects; single-event latchup hardening; total-dose hardened CMOS process; Hysteresis; Manufacturing processes; Microelectronics; Radiation detectors; Radiation hardening; Research and development; Shafts; Space technology; Voltage; Voltage-controlled oscillators;
Conference_Titel :
Radiation Effects Data Workshop, 2004 IEEE
Conference_Location :
Atlanta, GA, USA
Print_ISBN :
0-7803-8697-3
DOI :
10.1109/REDW.2004.1352913
