Title :
Analysis of Blech product threshold in passivated AlCu interconnections
Author :
Arnaud, Laurent ; Tartavel, G. ; Waltz, P. ; Ulmer, L.
Author_Institution :
CEA, Centre d´´Etudes Nucleaires de Grenoble, France
Abstract :
The Blech product threshold (Blech, J. Appl. Phys. vol. 47, pp. 1203-1208, 1976) of encapsulated AlCu metallization was investigated in two level structures where W studs are located at both ends of the metal stripes. A high value of 104 A/cm was experimentally measured either for multigrain and for quasi-bamboo microstructures. This value, about 5 times higher than previous values reported for unpassivated structure is explained on the basis of stresses in the structure
Keywords :
aluminium alloys; copper alloys; crystal microstructure; electromigration; encapsulation; integrated circuit interconnections; integrated circuit metallisation; integrated circuit reliability; integrated circuit testing; internal stresses; passivation; AlCu-W; Blech product threshold; W studs; electromigration; encapsulated AlCu metallization; metal stripes; multigrain microstructures; passivated AlCu interconnections; quasi-bamboo microstructures; structure stresses; two level structures; unpassivated structure; Anodes; Current density; Electromigration; Length measurement; Metallization; Packaging; Plugs; Stress; Testing; Tin;
Conference_Titel :
Interconnect Technology Conference, 1998. Proceedings of the IEEE 1998 International
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-4285-2
DOI :
10.1109/IITC.1998.704926
