Phi-scatterometry for integrated linewidth control in DRAM manufacturing

Author

Benesch, Norbert ; Hettwer, A. ; Schneider, Claus ; Pfitzner, Lothar ; Ryssel, Heiner

Author_Institution

Fraunhofer Inst. of Integrated Circuits, Erlangen, Germany

fYear

2001

fDate

2001

Firstpage

129

Lastpage

132

Abstract

A cost-effective scatterometry method is presented which is suitable for integrated linewidth control and which is a supplement to conventional SEMs. The phi-scatterometry procedure is carried out directly on periodic functional patterns instead of using additional test structures. Long-term simulations of diffraction effects are not required. The measurement results are evaluated by neural networks performing classifications of pattern parameters. Thereby, fast fault detection and immediate process control is enabled. A phi-scatterometry prototype was built for flexible mobile metrology in 300-mm production environments. The measurement principle was verified with DRAM patterns having trenches in two dimensions

Keywords

DRAM chips; fault diagnosis; integrated circuit measurement; integrated circuit testing; light scattering; photolithography; 300 mm; DRAM manufacturing; fault detection; flexible mobile metrology; integrated linewidth control; neural networks; pattern parameters; periodic functional patterns; phi-scatterometry; trenches; Diffraction; Fault detection; Neural networks; Performance evaluation; Periodic structures; Process control; Prototypes; Radar measurements; Random access memory; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Manufacturing Symposium, 2001 IEEE International

Conference_Location

San Jose, CA

Print_ISBN

0-7803-6731-6

Type

conf

DOI

10.1109/ISSM.2001.962931

Filename

962931