Title :
Towards a complete plasma diagnostic system
Author :
Zhao, Dong Wu ; Spanoc, C.
Author_Institution :
California Univ., Berkeley, CA, USA
Abstract :
Plasma etching signals arising from three different sources are collected and analyzed, including optical emission spectroscopy (OES), RF power fundamental and harmonic information, and machine signals such as power, chamber pressure, temperature, gas flow rate, etc. CF2 OES lines 275 nm and 321 nm are found to be better than any other signals for poly-etch endpoint detection. In addition, excellent statistical models for wafer state prediction are obtained by linear stepwise regression on all available signals. Finally a data exploration system, based on syntactic analysis, is developed for efficiently browsing the data archive, allowing users to examine the data both qualitatively and quantitatively
Keywords :
plasma diagnostics; semiconductor process modelling; sputter etching; statistical analysis; 275 nm; 321 nm; RF power fundamental information; chamber pressure; data exploration system; gas flow rate; linear stepwise regression; machine signals; optical emission spectroscopy; plasma diagnostic system; plasma etching signals; poly-etch endpoint detection; statistical models; syntactic analysis; wafer state prediction; Etching; Harmonic analysis; Information analysis; Plasma applications; Plasma diagnostics; Plasma sources; Plasma temperature; RF signals; Signal analysis; Stimulated emission;
Conference_Titel :
Semiconductor Manufacturing Symposium, 2001 IEEE International
Conference_Location :
San Jose, CA
Print_ISBN :
0-7803-6731-6
DOI :
10.1109/ISSM.2001.962933
