Spectroscopic CD technology for gate process control

Author

Levy, Ady ; Lakkapragada, Suresh ; Mieher, Walter ; Bhatia, Kamal ; Whitney, Umar ; Hankinson, Matt

Author_Institution

Mercury Div., KLA-Tencor Corp., Milpitas, CA, USA

fYear

2001

fDate

2001

Firstpage

141

Lastpage

144

Abstract

Spectroscopic CD (SCD) technology provides high precision shape information with excellent correlation to established critical dimension metrology. Poly-gate wafers from over 20 lots produced in a high-volume manufacturing fab were measured and analyzed with KLA-Tencor´s SCD and SEM CD tools. APC simulations on the SCD data demonstrate the potential to reduce the CD deviation from the process target. Focus-exposure process window analysis using additional shape information available with SCD shows the potential value of the more complete view for lithographic cluster tool monitoring

Keywords

ellipsometry; integrated circuit manufacture; integrated circuit measurement; lithography; process control; shape measurement; ultraviolet spectroscopy; APC simulations; IC production; KLA-Tencor; critical dimension metrology; focus-exposure process window analysis; gate process control; high precision shape information; high-volume manufacturing fab; lithographic cluster tool monitoring; lithography process window monitoring; optical metrology technology; poly-gate wafers; semiconductor fabrication facility; spectroscopic CD technology; spectroscopic ellipsometry; Gratings; Lithography; Measurement uncertainty; Metrology; Monitoring; Process control; Resists; Semiconductor device manufacture; Shape; Spectroscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Manufacturing Symposium, 2001 IEEE International

Conference_Location

San Jose, CA

Print_ISBN

0-7803-6731-6

Type

conf

DOI

10.1109/ISSM.2001.962934

Filename

962934