Title :
Multi-wafer rapid isothermal processing
Author :
Nakao, K. ; Asano, T. ; Fukushima, H. ; Yamamoto, H. ; Dip, A. ; Joe, R. ; Meara, D.O. ; Soave, R. ; Kaushal, S.
Author_Institution :
Tokyo Electron Tohoku Ltd., Kanagawa, Japan
Abstract :
A new concept in multi-wafer (MW) rapid thermal processing (RTP) is presented. An innovative approach to hot-wall, isothermal processing technology advances the conventional large batch environment into the realm of RTP processing. Using recent developments in heater technology along with advancements in other critical processing areas, a method for processing a lot (25 wafers) within an hour in a hot-wall RTP environment is demonstrated
Keywords :
batch processing (industrial); integrated circuit manufacture; rapid thermal processing; semiconductor technology; cycle time analysis; heater technology; hot-wall RTP environment; hot-wall isothermal processing technology; multi-wafer RTP; multi-wafer rapid thermal processing; semiconductor wafer processing; Costs; Electrons; Furnaces; Isothermal processes; Logic devices; Manufacturing processes; Production; Rapid thermal processing; Thermal factors; Time to market;
Conference_Titel :
Semiconductor Manufacturing Symposium, 2001 IEEE International
Conference_Location :
San Jose, CA
Print_ISBN :
0-7803-6731-6
DOI :
10.1109/ISSM.2001.962935
