Title :
Characterization and integration of hollow cathode magnetron sputtered Ti/TiN with low pressure Al planarization
Author :
Lai, K.F. ; Tam, L.M. ; Lu, Q.
Author_Institution :
Ginzton Res. Center, Novellus Syst., Palto Alto, CA, USA
Abstract :
Ti-TiN deposited by hollow cathode magnetron (HCM) sputtering has been successfully integrated with the low pressure (LP) Al planarization process to replace collimated Ti as the wetting layer. The HCM Ti-TiN stack is an excellent Al wetting layer that is insensitive to contamination, provides a much wider process window, and reduces TiAl x formation. It also promotes strongly oriented Al, which is superior to Al films on collimated Ti
Keywords :
aluminium; chemical interdiffusion; crystal orientation; diffusion barriers; integrated circuit interconnections; integrated circuit metallisation; sputter deposition; surface treatment; titanium; titanium compounds; wetting; Al films; Al planarization process; Al wetting layer; Al-TiN-Ti; HCM Ti-TiN stack; Ti-TiN hollow cathode magnetron sputter deposition; TiAl; TiAlx formation; collimated Ti wetting layer; contamination insensitivity; hollow cathode magnetron sputtered Ti/TiN; low pressure Al planarization; process integration; process window; strongly oriented Al; Argon; Artificial intelligence; Atomic force microscopy; Cathodes; Collimators; Conductivity; Planarization; Scanning electron microscopy; Sputtering; Tin;
Conference_Titel :
Interconnect Technology Conference, 1998. Proceedings of the IEEE 1998 International
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-4285-2
DOI :
10.1109/IITC.1998.704927
