Title :
Flight GaAs numerically controlled oscillator
Author :
La Macchia, M.P. ; Crawforth, B. ; Grung, B.
Abstract :
A GaAs numerically controlled oscillator (NCO) has been designed and fabricated in 1- mu m GaAs E/D MESFET direct-coupled FET logic (DCFL). The NCO has been designed for spaceborne applications emphasizing low power and radiation tolerance. The NCO will be utilized for both direct digital frequency synthesis and direct digital phase modulation applications. The device contains all the necessary functions to perform frequency and phase synthesis using only an external digital-to-analog converter. The device has been fabricated and is fully functional.<>
Keywords :
III-V semiconductors; aerospace instrumentation; field effect integrated circuits; frequency synthesizers; gallium arsenide; integrated logic circuits; phase modulation; variable-frequency oscillators; 1 micron; DCFL; GaAs; VFO; direct digital frequency synthesis; direct digital phase modulation; direct-coupled FET logic; enhancement/depletion MESFET process; low power; numerically controlled oscillator; phase synthesis; radiation tolerance; spaceborne applications; Digital-analog conversion; FETs; Frequency conversion; Frequency synthesizers; Gallium arsenide; Logic design; Logic devices; MESFETs; Oscillators; Phase modulation;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1989. Technical Digest 1989., 11th Annual
Conference_Location :
San Diego, CA, USA
DOI :
10.1109/GAAS.1989.69291
