Flight GaAs numerically controlled oscillator

Author

La Macchia, M.P. ; Crawforth, B. ; Grung, B.

fYear

1989

fDate

22-25 Oct. 1989

Firstpage

49

Lastpage

52

Abstract

A GaAs numerically controlled oscillator (NCO) has been designed and fabricated in 1- mu m GaAs E/D MESFET direct-coupled FET logic (DCFL). The NCO has been designed for spaceborne applications emphasizing low power and radiation tolerance. The NCO will be utilized for both direct digital frequency synthesis and direct digital phase modulation applications. The device contains all the necessary functions to perform frequency and phase synthesis using only an external digital-to-analog converter. The device has been fabricated and is fully functional.<>

Keywords

III-V semiconductors; aerospace instrumentation; field effect integrated circuits; frequency synthesizers; gallium arsenide; integrated logic circuits; phase modulation; variable-frequency oscillators; 1 micron; DCFL; GaAs; VFO; direct digital frequency synthesis; direct digital phase modulation; direct-coupled FET logic; enhancement/depletion MESFET process; low power; numerically controlled oscillator; phase synthesis; radiation tolerance; spaceborne applications; Digital-analog conversion; FETs; Frequency conversion; Frequency synthesizers; Gallium arsenide; Logic design; Logic devices; MESFETs; Oscillators; Phase modulation;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1989. Technical Digest 1989., 11th Annual

Conference_Location

San Diego, CA, USA

Type

conf

DOI

10.1109/GAAS.1989.69291

Filename

69291