Characterization of metallic impurities for the ULSI fabrication process

Author

Sakurai, Hiroki ; Iwase, Masao ; Shimazaki, Ayako ; Nadahara, Soichi

Author_Institution

Semicond. Co., Toshiba Corp., Yokohama, Japan

fYear

2001

fDate

2001

Firstpage

163

Lastpage

166

Abstract

It is one of the key points for the "Agile Fab" concept that the process equipment is shared for several processes. On the other hand, new metals tend to be applied for the latest DRAM, FeRAM and logic devices. Therefore, we investigated the behavior of these new metals to derive a protocol for "Agile-Fab." We evaluated their electrical properties and diffusion behavior. It is necessary to construct a suitable "protocol" using the result, and to control metallic contamination

Keywords

ULSI; impurities; integrated circuit interconnections; integrated circuit manufacture; integrated circuit metallisation; metals; Agile Fab; Cu; IC interconnects; IC metallisation; PZT; PbZrO3TiO3; Pt; Ru; Si; ULSI fabrication process; W; diffusion behavior; electrical properties; metallic contamination control; metallic impurities characterisation; process equipment; recombination lifetime; Annealing; Contamination; Fabrication; Ferroelectric materials; Impurities; Leakage current; Nitrogen; Pollution measurement; Random access memory; Ultra large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Manufacturing Symposium, 2001 IEEE International

Conference_Location

San Jose, CA

Print_ISBN

0-7803-6731-6

Type

conf

DOI

10.1109/ISSM.2001.962939

Filename

962939