Title :
Characterization of metallic impurities for the ULSI fabrication process
Author :
Sakurai, Hiroki ; Iwase, Masao ; Shimazaki, Ayako ; Nadahara, Soichi
Author_Institution :
Semicond. Co., Toshiba Corp., Yokohama, Japan
Abstract :
It is one of the key points for the "Agile Fab" concept that the process equipment is shared for several processes. On the other hand, new metals tend to be applied for the latest DRAM, FeRAM and logic devices. Therefore, we investigated the behavior of these new metals to derive a protocol for "Agile-Fab." We evaluated their electrical properties and diffusion behavior. It is necessary to construct a suitable "protocol" using the result, and to control metallic contamination
Keywords :
ULSI; impurities; integrated circuit interconnections; integrated circuit manufacture; integrated circuit metallisation; metals; Agile Fab; Cu; IC interconnects; IC metallisation; PZT; PbZrO3TiO3; Pt; Ru; Si; ULSI fabrication process; W; diffusion behavior; electrical properties; metallic contamination control; metallic impurities characterisation; process equipment; recombination lifetime; Annealing; Contamination; Fabrication; Ferroelectric materials; Impurities; Leakage current; Nitrogen; Pollution measurement; Random access memory; Ultra large scale integration;
Conference_Titel :
Semiconductor Manufacturing Symposium, 2001 IEEE International
Conference_Location :
San Jose, CA
Print_ISBN :
0-7803-6731-6
DOI :
10.1109/ISSM.2001.962939
