UV-hardened high-modulus CVD-ULK material for 45-nm node Cu/low-k interconnects with homogeneous dielectric structures

Author

Furusawa, Takeshi ; Miura, Noriko ; Matsumoto, Masahiro ; Goto, Kinya ; Hashii, Sinobu ; Fujiwara, Yuji ; Yoshikawa, Kazunori ; Yonekura, Kazumasa ; Asano, Yoshinobu ; Ichiki, Tsutomu ; Kawanabe, Naoki ; Matsuzawa, Tomoo ; Matsuura, Masazumi

Author_Institution

Renesas Technol. Corp, Hyogo, Japan

fYear

2005

fDate

6-8 June 2005

Firstpage

45

Lastpage

47

Abstract

A UV-hardened high-modulus ULK (ultra low-k) material is proposed for 45-nm-node Cu/low-k interconnects with homogeneous dielectric structures. An elastic modulus as high as 16 GPa was achieved for the ULK material with k=2.65. By combining this material with an advanced dielectric barrier (k=3.7), interconnect test devices with 65-nm-node dimensions were fabricated. The UV-hardened high-modulus ULK material is shown to be effective in improving electrical performance while maintaining sufficient mechanical integrity.

Keywords

CVD coatings; copper; dielectric thin films; elastic moduli; integrated circuit interconnections; 16 GPa; 45 nm; 65 nm; CVD-ULK material; Cu; UV-hardened high-modulus material; dielectric barrier; elastic modulus; homogeneous dielectric structures; low-k interconnects; mechanical integrity; ultra low-k material; Acceleration; Assembly; Curing; Dielectric devices; Dielectric materials; Materials testing; Mechanical factors; Seals; Semiconductor materials; Stress;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference, 2005. Proceedings of the IEEE 2005 International

Print_ISBN

0-7803-8752-X

Type

conf

DOI

10.1109/IITC.2005.1499918

Filename

1499918