Title :
Review of SiGe process technology and its impact on RFIC design
Author :
Das, A. ; Huang, M. ; Mondal, J. ; Kaczman, D. ; Shurboff, C. ; Cosentino, S.
Author_Institution :
Motorola Inc., Libertyville, IL, USA
Abstract :
Reviews recently published SiGe BiCMOS technologies for RFIC design. Performance and integration trends in SiGe HBTs are discussed. Performance of passive devices, such as an inductor, plays a key role in RF design. We review approaches to realize high Q inductor on a Si substrate. Finally, interaction of HBT performance with design is illustrated through LNA design.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; UHF amplifiers; UHF integrated circuits; heterojunction bipolar transistors; inductors; integrated circuit design; semiconductor materials; BiCMOS technologies; HBTs; LNA design; RFIC design; SiGe; high Q inductor; passive devices; process technology; BiCMOS integrated circuits; CMOS technology; Cutoff frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Inductors; Radio frequency; Radiofrequency integrated circuits; Silicon germanium; Substrates;
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 2002 IEEE
Conference_Location :
Seattle, WA, USA
Print_ISBN :
0-7803-7246-8
DOI :
10.1109/RFIC.2002.1012059
