DocumentCode :
1838937
Title :
Shallow trench isolation scatterometry metrology in a high volume fab
Author :
Lensing, Kevin R. ; Markle, Richard J. ; Stirton, Broc ; Laughery, Michael A.
Author_Institution :
Adv. Micro Devices Inc., Austin, TX, USA
fYear :
2001
fDate :
2001
Firstpage :
195
Lastpage :
198
Abstract :
Focuses on the current roles of metrology systems associated with a shallow trench isolation (STI) run-to-run (RtR) controller and recent advances AMD has made applying new, ODP scatterometry-based metrology to this application. It will compare industry standard metrology techniques to ODP, with the objective of identifying the STI metrology system or systems that will produce timely and reliable data streams with the largest quantity of process information at the highest possible signal to noise (S/N) ratio
Keywords :
ellipsometry; integrated circuit measurement; isolation technology; process control; reflectometry; surface topography measurement; AMD; ODP; high volume fab; optical digital profilometry; process information; reliable data streams; run-to-run controller; scatterometry metrology; shallow trench isolation; signal to noise ratio; Automatic control; Control systems; Geometrical optics; Metrology; Optical films; Optical scattering; Radar measurements; Signal processing; Software libraries; Timbre;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Manufacturing Symposium, 2001 IEEE International
Conference_Location :
San Jose, CA
Print_ISBN :
0-7803-6731-6
Type :
conf
DOI :
10.1109/ISSM.2001.962947
Filename :
962947
Link To Document :
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