Title :
COM2 enhanced graded base SiGe technology for high speed applications
Author :
Ivanov, T. ; Carroll, Mariana ; Moinian, S. ; Mastrapasqua, M. ; Frei, A. ; Chen, Aaron ; King, Candice ; Hamad, Amr A. ; Martin, Eric ; Shive, S. ; Esry, T. ; Lee, Chi-Kwan ; Johnson, R. ; Sorsch, T. ; Carroll, Mariana ; Banoo, K. ; Smith, Paul ; Cochran
Author_Institution :
Agere Syst., Orlando, FL, USA
Abstract :
The COM2 Enhanced Graded Base SiGe modular BiCMOS technology has been developed. It is based on the COM2 digital CMOS process. The technology achieves peak Ft=100 GHz, peak Fmax=101 GHz, peak /spl beta/=186 and BVcex=2.05 V. Ft-BVcex product of 205 and good across wafer uniformity are demonstrated.
Keywords :
BiCMOS digital integrated circuits; Ge-Si alloys; high-speed integrated circuits; integrated circuit technology; semiconductor materials; 100 GHz; 101 GHz; 2.05 V; BiCMOS technology; COM2 process; SiGe; across wafer uniformity; enhanced graded base technology; high speed applications; Boron; Electric resistance; Germanium silicon alloys; Libraries; MOS devices; Power engineering and energy; Radiofrequency integrated circuits; Resistors; Silicon germanium; Voltage;
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 2002 IEEE
Conference_Location :
Seattle, WA, USA
Print_ISBN :
0-7803-7246-8
DOI :
10.1109/RFIC.2002.1012062
