Title :
Low k material optimization
Author :
MacWilliams, Ken ; Huang, Judy ; Schulberg, Michelle ; Van Cleemput, P.
Author_Institution :
Novellus Syst. Inc., San Jose, CA, USA
Abstract :
A primary challenge in building integrated circuits with geometries of 0.13 μm and smaller is the development of materials with low dielectric constants. The properties of the low k films must be compatible with subsequent processing for integration. The present work describes the influence of the starting materials (precursors) and of the deposition process on the electrical and mechanical properties of the low k film
Keywords :
dielectric thin films; hardness; integrated circuit technology; permittivity; plasma CVD coatings; porous materials; silicon compounds; 0.13 micron; PECVD; SiCO:H; deposition process; dielectric constants; electrical properties; film hardness; hermeticity; low k films; material optimization; mechanical properties; precursors; starting materials; Delay; Dielectric constant; Dielectric materials; Geometry; Industrial relations; Manufacturing industries; Mechanical factors; Microelectronics; Polarization; Semiconductor films;
Conference_Titel :
Semiconductor Manufacturing Symposium, 2001 IEEE International
Conference_Location :
San Jose, CA
Print_ISBN :
0-7803-6731-6
DOI :
10.1109/ISSM.2001.962949
