Cu/ULK (k=2.0) integration for 45 nm node and below using an improved hybrid material with conventional BEOL processing and a late porogen removal

Author

Jousseaume, V. ; Assous, M. ; Zenasni, A. ; Maitrejean, S. ; Rémiat, B. ; Leduc, P. ; Trouvé, H. ; Le Cornec, C. ; Fayolle, M. ; Roule, A. ; Ciaramella, F. ; Bouchu, D. ; David, T. ; Roman, A. ; Scevola, D. ; Morel, T. ; Rebiscoul, D. ; Prokopowicz, G. ;

Author_Institution

CEA-DRT-LETI, Grenoble, France

fYear

2005

fDate

6-8 June 2005

Firstpage

60

Lastpage

62

Abstract

Conventional Cu-ULK integration schemes lead to a drastic increase of the dielectric constant due to porous material degradation during process steps. In this paper, a post-integration porogen removal approach is studied to overcome this issue. Material optimization is presented (k=2.0) allowing the use of conventional BEOL integration processes such as oxygen-based etch chemistry, metal CVD barrier deposition and standard CMP process for dense low k. An integrated k value lower than 2.2 is obtained.

Keywords

chemical mechanical polishing; chemical vapour deposition; copper; dielectric thin films; etching; integrated circuit interconnections; permittivity; 45 nm; BEOL integration processes; CMP process; Cu; dense low k material; dielectric constant; etch chemistry; late porogen removal; material optimization; metal CVD barrier deposition; ultra low k dielectric materials; Chemistry; Dielectric constant; Dielectric materials; Etching; Inorganic materials; Plasma applications; Plasma materials processing; Solids; Thermal degradation; Thermal stability;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference, 2005. Proceedings of the IEEE 2005 International

Print_ISBN

0-7803-8752-X

Type

conf

DOI

10.1109/IITC.2005.1499923

Filename

1499923