A robust high voltage Si LDMOS model extraction process to achieve first pass linear RFIC amplifier design success

A robust model extraction procedure was developed for a high voltage Si LDMOS RFIC process to achieve first pass linear RFIC amplifier design success. The model extraction process utilizes pulsed isothermal small-signal S-parameter measurements and extracted large-signal Root Models at three different temperatures to extract model parameters for Motorola´s Electro-Thermal (MET) FET analytical model. Large-signal model validation was performed against loadpull measurements under 1-tone and 2-tone stimuli. Also, the models were developed into a design kit within Agilent/sup (R)/ EEsof/sup (R)/´s ADS/sup (R)/ (Advanced Design System) to design a wide-band 30 Watt power amplifier IC which achieved first pass design success.